inchange semiconductor isc product specification 1 isc website www.iscsemi.cn isc silicon npn darlington power transistor 2SD1662 description high dc current gain : h fe = 1000(min.)@ i c = 15a collector-emitter breakdown voltage- : v (br)ceo = 100v(min.) low collector saturation voltage : v ce(sat) = 1.5v(max.)@ i c = 15a applications designed for high current switching application. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 15 a i b base current- continuous 1 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification 2 isc website www.iscsemi.cn isc silicon npn darlington power transistor 2SD1662 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma, i b = 0 100 v v ce (sat) collector-emitter satu ration voltage i c = 15a ,i b = 25ma 1.5 v v be (sat) base-emitter satura tion voltage i c = 15a ,i b = 25ma 2.2 v i cbo collector cutoff current v cb = 100v, i e = 0 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 ma h fe dc current gain i c = 15a; v ce = 3v 1000 c ob output capacitance i e = 0;v cb = 10v;f test = 1.0mhz 280 pf f t current-gain?bandwidth product i c = 1a; v ce = 5v 14 mhz switching times t on turn-on time i b1 = -i b2 = 10ma; r l = 10 ; v cc = 50v 1.0 s t stg storage time 2.0 s t f fall time 1.5 s
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